Extreme ultraviolet (EUV) lithography has taken a significant leap forward, reaching an impressive half-pitch resolution of 5 nm. This advancement by Iason Giannopoulos and team is a game-changer for the semiconductor industry, enabling the creation of more densely packed and efficient microchips. The novel approach uses mirror-based interference lithography, which offers several advantages over traditional techniques, such as higher diffraction efficiency and compatibility with shorter wavelengths. The benefits of this development are far-reaching, potentially influencing a variety of fields from scientific research to industrial applications, particularly in the ongoing miniaturization of integrated circuits.

• Mirror-based EUV-IL offers unprecedented patterning precision.
• Half-pitch (HP) resolution down to 5 nm achieved using standard EUV wavelength.
• Surpasses barriers faced by conventional grating-based lithography.
• Vital progress for nanoscience, technology, and future CMOS manufacturing.
• Potential applications extend beyond current EUV wavelengths to shorter, more advanced spectra.

The implications for computational chemistry and nanotechnology are profound. By pushing the limits of photolithography, we open doors for the synthesis of increasingly smaller and more intricate molecular electronics. This breakthrough could lead to new research avenues exploring the interactions of light and matter at previously inaccessible scales.